Stewart S. Taylor

According to our database1, Stewart S. Taylor authored at least 14 papers between 1997 and 2011.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2011
A flip-chip-packaged 1.8V 28dBm class-AB power amplifier with shielded concentric transformers in 32nm SoC CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

A 2.5GHz 32nm 0.35mm<sup>2</sup> 3.5dB NF -5dBm P1dB fully differential CMOS push-pull LNA with integrated 34dBm T/R switch and ESD protection.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

Fully balanced low-noise transconductance amplifiers with P1dB > 0dBm in 45nm CMOS.
Proceedings of the 37th European Solid-State Circuits Conference, 2011

2010
A 10 GHz low phase noise VCO employing current reuse and capacitive power combining.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2010

2009
A Class-G Supply Modulator and Class-E PA in 130 nm CMOS.
IEEE J. Solid State Circuits, 2009

A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process.
IEEE J. Solid State Circuits, 2009

2008
A Broadband Low-Cost Direct-Conversion Receiver Front-End in 90 nm CMOS.
IEEE J. Solid State Circuits, 2008

2007
A 5 GHz, 21 dBm output-IP3 resistive feedback LNA in 90-nm CMOS.
Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2006
A 5-GHz 20-dBm Power Amplifier With Digitally Assisted AM-PM Correction in a 90-nm CMOS Process.
IEEE J. Solid State Circuits, 2006

A 5-GHz 108-Mb/s 2 $\times$2 MIMO Transceiver RFIC With Fully Integrated 20.5-dBm ${\rm P}_{\rm 1dB}$ Power Amplifiers in 90-nm CMOS.
IEEE J. Solid State Circuits, 2006

A 5GHz resistive-feedback CMOS LNA for low-cost multi-standard applications.
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

A 5GHz 108Mb/s 2x2 MIMO Transceiver with Fully Integrated +16dBm PAs in 90nm CMOS.
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2005
A 5 GHz class-AB power amplifier in 90 nm CMOS with digitally-assisted AM-PM correction.
Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005

1997
A GaAs MESFET Schottky diode barrier height reference circuit.
IEEE J. Solid State Circuits, 1997


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