Toshio Takeshima

According to our database1, Toshio Takeshima authored at least 2 papers between 1990 and 1996.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

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Bibliography

1996
A 98 mm<sup>2</sup> die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell.
IEEE J. Solid State Circuits, 1996

1990
A BIST scheme using microprogram ROM for large capacity memories.
Proceedings of the Proceedings IEEE International Test Conference 1990, 1990


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