Hiroshi Sugawara

According to our database, Hiroshi Sugawara authored at least 11 papers between 1992 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

A 29-Gb/mm² 1-Tb 3-b/Cell 3-D Flash Memory With CMOS Direct Bonded Array (CBA) Technology.

Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Yumi Higashi, Yutaka Shimizu, Takeshi Nakano, Yusuke Ochi, Hiroaki Yamada, Nobushi Matsuura, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Takahiro Shimizu, Akio Sugahara, Taira Shibuya, Atsushi Okuyama, Junji Yamada, Takatoshi Minamoto, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-Woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki, Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihiro Oyama, Yen-Lung Jason Li, Yoshihisa Watanabe, Toshiyuki Kouchi, Koji Hosono

IEEE J. Solid State Circuits, January, 2026

2025

A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os.

Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Junya Matsuno, Yumi Higashi, Yutaka Shimizu, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Takeshi Nakano, Yusuke Ochi, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki, Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihisa Watanabe, Toshiyuki Kouchi

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2023

A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm² bit density with 3.2Gbps interface and 205MB/s program throughput.

Mario Sako, T. Nakajima, Fumihiro Kono, Takeshi Nakano, Masaki Fujiu, Junji Musha, Dai Nakamura, Naoaki Kanagawa, Yutaka Shimizu, Kosuke Yanagidaira, Tetsuaki Utsumi, T. Kawano, Yoshikazu Hosomura, Hiroki Yabe, Masahiro Kano, Hiroshi Sugawara, A. H. Sravan, Koichiro Hayashi, Toshiyuki Kouchi, Yoshihisa Watanabe

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2021

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology.

Tsutomu Higuchi, Takuyo Kodama, Koji Kato, Ryo Fukuda, Naoya Tokiwa, Mitsuhiro Abe, Teruo Takagiwa, Yuki Shimizu, Junji Musha, Katsuaki Sakurai, Jumpei Sato, Tetsuaki Utsumi, Kazuhide Yoneya, Yasuhiro Suematsu, Toshifumi Hashimoto, Takeshi Hioka, Kosuke Yanagidaira, Masatsugu Kojima, Junya Matsuno, Kei Shiraishi, Kensuke Yamamoto, Shintaro Hayashi, Tomoharu Hashiguchi, Kazuko Inuzuka, Akio Sugahara, Mitsuaki Honma, Keiji Tsunoda, Kazumasa Yamamoto, Takahiro Sugimoto, Tomofumi Fujimura, Mizuki Kaneko, Hiroki Date, Osamu Kobayashi, Takatoshi Minamoto, Ryoichi Tachibana, Itaru Yamaguchi, Juan Lee, Venky Ramachandra, Srinivas Rajendra, Tianyu Tang, Siddhesh Darne, Jiwang Lee, Jason Li, Toru Miwa, Ryuji Yamashita, Hiroshi Sugawara, Naoki Ookuma, Masahiro Kano, Hiroyuki Mizukoshi, Yuki Kuniyoshi, Mitsuyuki Watanabe, Kei Akiyama, Hirotoshi Mori, Akira Arimizu, Yoshito Katano, Masakazu Ehama, Hiroshi Maejima, Koji Hosono, Masahiro Yoshihara

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2020

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology.

Noboru Shibata, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, Junji Musha, Takatoshi Minamoto, Kazushige Kanda, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Masatsugu Ogawa, Yusuke Ochi, Takahiro Shimizu, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Jun Nakai, Jumpei Sato, Namasivayam Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, Hiroshi Nakamura, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Tomoaki Nakano

IEEE J. Solid State Circuits, 2020

2019

A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology.

Noboru Shibata, Kazushige Kanda, Takahiro Shimizu, Jun Nakai, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Takeshi Nakano, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, H. Takamoto, Junji Musha, Takatoshi Minamoto, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Mikio Ogawa, Yusuke Ochi, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Naohito Morozumi, Jumpei Sato, Namas Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, T. Kaneko, Hiroshi Nakamura

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology.

Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2014

Development of a Parallel Link Arm for Object Handling by Wheeled Mobile Robot.

Toyomi Fujita, Hiroshi Sugawara

Proceedings of the ICINCO 2014 - Proceedings of the 11th International Conference on Informatics in Control, Automation and Robotics, Volume 2, Vienna, Austria, 1, 2014

1996

A 98 mm² die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell.

Masayoshi Ohkawa, Hiroshi Sugawara, Naoaki Sudo, Masaru Tsukiji, Ken-ichiro Nakagawa, Masato Kawata, Ken-ichi Oyama, Toshio Takeshima, Shuichi Ohya

IEEE J. Solid State Circuits, 1996

1993

A 30-ns 256-Mb DRAM with a multidivided array structure.

Tadahiko Sugibayashi, Toshio Takeshima, Isao Naritake, Tatsuya Matano, Hiroshi Takada, Yoshiharu Aimoto, Koichiro Furuta, Mamoru Fujita, Takanori Saeki, Hiroshi Sugawara, Tatsunori Murotani, Naoki Kasai, Kentaro Shibahara, Ken Nakajima, Hiromitsu Hada, Takehiko Hamada, Naoaki Aizaki, Takemitsu Kunio, Eiichiro Kakehashi, Katsuhiro Masumori, Takaho Tanigawa

IEEE J. Solid State Circuits, November, 1993

1992

Clean room robot with non-contact joints using magnetic bearings.

Toshiro Higuchi, Koichi Oka, Hiroshi Sugawara

Adv. Robotics, 1992