Tsuyoshi Arigane

According to our database, Tsuyoshi Arigane authored at least 4 papers between 2005 and 2007.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of four.

2007

Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories.

Kazuo Otsuga, Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi

IEICE Trans. Electron., 2007

A 126 mm² 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology.

Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa

IEICE Trans. Electron., 2007

2006

A 130-nm CMOS 95-mm² 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput.

Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Keiichi Yoshida, Yoshinori Takase, Takayuki Yoshitake, Osamu Tsuchiya, Yoshinori Ikeda, Shunichi Narumi, Michitaro Kanamitsu, Kazuto Izawa, Kazunori Furusawa

IEICE Trans. Electron., 2006

2005

Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories.

Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Kazuo Otsuga, Takayuki Kawahara

IEEE J. Solid State Circuits, 2005