Wen-Zhang Lin

According to our database, Wen-Zhang Lin authored at least 3 papers between 2016 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

A ReRAM Macro Using Dynamic Trip-Point-Mismatch Sampling Current-Mode Sense Amplifier and Low-DC Voltage-Mode Write-Termination Scheme Against Resistance and Write-Delay Variation.

Chieh-Pu Lo, Wen-Zhang Lin, Wei-Yu Lin, Huan-Ting Lin, Tzu-Hsien Yang, Yen-Ning Chiang, Ya-Chin King, Chrong Jung Lin, Yu-Der Chih, Tsung-Yung Jonathon Chang, Meng-Fan Chang

IEEE J. Solid State Circuits, 2019

2016

A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing.

Meng-Fan Chang, Li-Yue Huang, Wen-Zhang Lin, Yen-Ning Chiang, Chia-Chen Kuo, Ching-Hao Chuang, Keng-Hao Yang, Hsiang-Jen Tsai, Tien-Fu Chen, Shyh-Shyuan Sheu

IEEE J. Solid State Circuits, 2016

7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell.

Chien-Chen Lin, Jui-Yu Hung, Wen-Zhang Lin, Chieh-Pu Lo, Yen-Ning Chiang, Hsiang-Jen Tsai, Geng-Hau Yang, Ya-Chin King, Chrong Jung Lin, Tien-Fu Chen, Meng-Fan Chang

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016