Chieh-Pu Lo
Orcid: 0000-0002-3413-8708
According to our database1,
Chieh-Pu Lo
authored at least 11 papers
between 2016 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
30.6 Vecim: A 289.13GOPS/W RISC-V Vector Co-Processor with Compute-in-Memory Vector Register File for Efficient High-Performance Computing.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device.
IEEE J. Solid State Circuits, 2022
A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
An 89TOPS/W and 16.3TOPS/mm<sup>2</sup> All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A ReRAM Macro Using Dynamic Trip-Point-Mismatch Sampling Current-Mode Sense Amplifier and Low-DC Voltage-Mode Write-Termination Scheme Against Resistance and Write-Delay Variation.
IEEE J. Solid State Circuits, 2019
2017
A 65-nm ReRAM-Enabled Nonvolatile Processor With Time-Space Domain Adaption and Self-Write-Termination Achieving > 4× Faster Clock Frequency and > 6× Higher Restore Speed.
IEEE J. Solid State Circuits, 2017
A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors.
IEEE J. Solid State Circuits, 2017
2016
4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016