Shyh-Shyuan Sheu
According to our database1,
Shyh-Shyuan Sheu
authored at least 45 papers
between 2001 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2024
8-Bit Precision 6T SRAM Compute-in-Memory Macro Using Global Bitline-Combining Scheme for Edge AI Chips.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024
A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips.
IEEE J. Solid State Circuits, January, 2024
2023
IEEE Trans. Circuits Syst. II Express Briefs, December, 2023
A 8-b-Precision 6T SRAM Computing-in-Memory Macro Using Segmented-Bitline Charge-Sharing Scheme for AI Edge Chips.
IEEE J. Solid State Circuits, March, 2023
U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
Two-Way Transpose Multibit 6T SRAM Computing-in-Memory Macro for Inference-Training AI Edge Chips.
IEEE J. Solid State Circuits, 2022
An Embedded Multi-Die Active Bridge (EMAB) Chip for Rapid-Prototype Programmable 2.5D/3D Packaging Technology.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 4K-400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
A 48 TOPS and 20943 TOPS/W 512kb Computation-in-SRAM Macro for Highly Reconfigurable Ternary CNN Acceleration.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021
2020
A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors.
IEEE J. Solid State Circuits, 2020
15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
NV-BNN: An Accurate Deep Convolutional Neural Network Based on Binary STT-MRAM for Adaptive AI Edge.
Proceedings of the 56th Annual Design Automation Conference 2019, 2019
A 55nm 1-to-8 bit Configurable 6T SRAM based Computing-in-Memory Unit-Macro for CNN-based AI Edge Processors.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2019
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
Highly Reliable Two-Step Charge-Pump Read Scheme for 1.5 F<sup>2</sup>/Bit Nonlinear Sub-Teraohm 0TNR Vertical ReRAM.
IEEE Trans. Circuits Syst. II Express Briefs, 2018
2017
A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data Processing.
IEEE J. Solid State Circuits, 2017
Write-energy-saving ReRAM-based nonvolatile SRAM with redundant bit-write-aware controller for last-level caches.
Proceedings of the 2017 IEEE/ACM International Symposium on Low Power Electronics and Design, 2017
2016
A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing.
IEEE J. Solid State Circuits, 2016
IEEE J. Emerg. Sel. Topics Circuits Syst., 2016
A low store energy and robust ReRAM-based flip-flop for normally off microprocessors.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2016
Designs of emerging memory based non-volatile TCAM for Internet-of-Things (IoT) and big-data processing: A 5T2R universal cell.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2016
Memory access algorithm for low energy CPU/GPU heterogeneous systems with hybrid DRAM/NVM memory architecture.
Proceedings of the 2016 IEEE Asia Pacific Conference on Circuits and Systems, 2016
2015
Set-Triggered-Parallel-Reset Memristor Logic for High-Density Heterogeneous-Integration Friendly Normally Off Applications.
IEEE Trans. Circuits Syst. II Express Briefs, 2015
Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices.
IEEE J. Emerg. Sel. Topics Circuits Syst., 2015
RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications.
Proceedings of the Symposium on VLSI Circuits, 2015
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme.
IEEE J. Solid State Circuits, 2014
ReRAM-based 4T2R nonvolatile TCAM with 7x NVM-stress reduction, and 4x improvement in speed-wordlength-capacity for normally-off instant-on filter-based search engines used in big-data processing.
Proceedings of the Symposium on VLSI Circuits, 2014
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2014
A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips.
Proceedings of the 2014 IEEE Asia Pacific Conference on Circuits and Systems, 2014
2013
A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes.
IEEE J. Solid State Circuits, 2013
2012
Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications.
IEEE J. Solid State Circuits, 2012
A 50 ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit.
IEICE Trans. Electron., 2012
Endurance-aware circuit designs of nonvolatile logic and nonvolatile sram using resistive memory (memristor) device.
Proceedings of the 17th Asia and South Pacific Design Automation Conference, 2012
2011
IEEE Des. Test Comput., 2011
Proceedings of the 29th IEEE VLSI Test Symposium, 2011
A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC.
Proceedings of the 16th Asia South Pacific Design Automation Conference, 2011
Challenges and trends in low-power 3D die-stacked IC designs using RAM, memristor logic, and resistive memory (ReRAM).
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011
2010
IET Comput. Digit. Tech., 2010
2001
Proceedings of the 2001 8th IEEE International Conference on Electronics, 2001