Wenwu Xiao

According to our database, Wenwu Xiao authored at least 4 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Physics based circuit compatible model for hybrid antiferroelectric random access memory.

Qiuxia Wu, Yue Peng, Wenwu Xiao, Wenxuan Ma, Shuo Zhang, Litao Sun, Chunfu Zhang, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2025

2023

Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor.

Fenning Liu, Yue Peng, Wenwu Xiao, Yan Liu, Xiao Yu, Genquan Han

Sci. China Inf. Sci., June, 2023

Hf0.5Zr0.5O2 1T-1C FeRAM arrays with excellent endurance performance for embedded memory.

Wenwu Xiao, Yue Peng, Yan Liu, Huifu Duan, Fujun Bai, Bing Yu, Qiwei Ren, Xiao Yu, Genquan Han

Sci. China Inf. Sci., April, 2023

A 135 GBps/Gbit 0.66 pJ/bit Stacked Embedded DRAM with Multilayer Arrays by Fine Pitch Hybrid Bonding and Mini-TSV.

Song Wang, Bing Yu, Wenwu Xiao, Fujun Bai, Xiaodong Long, Liang Bai, Xuerong Jia, Fengguo Zuo, Jie Tan, Yixin Guo, Peng Sun, Jun Zhou, Qiong Zhan, Sheng Hu, Yu Zhou, Yi Kang, Qiwei Ren, Xiping Jiang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023