Yann-Michel Niquet

According to our database, Yann-Michel Niquet authored at least 9 papers between 2012 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Specificities of linear Si QD arrays integration and characterization.

Heimanu Niebojewski, Benoit Bertrand, Etienne Nowak, Thomas Bedecarrats, Bruna Cardoso Paz, Lauriane Contamin, Pierre-André Mortemousque, V. Labracherie, L. Brevard, H. Sahin, Jean Charbonnier, C. Thomas, Myriam Assous, Mikaël Cassé, Matias Urdampilleta, Yann-Michel Niquet, François Perruchot, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

MOS technology for quantum computing: recent progress and perspectives for scaling up.

Louis Hutin, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Mikaël Cassé, Gérard Billiot, Xavier Jehl, Romain Maurand, Matias Urdampilleta, Yann-Michel Niquet, S. De Franceschi, Tristan Meunier, Maud Vinet

Proceedings of the Device Research Conference, 2021

2018

Si MOS technology for spin-based quantum computing.

Louis Hutin, Benoit Bertrand, Romain Maurand, Alessandro Crippa, Matias Urdampilleta, Y. J. Kim, A. Amisse, Heorhii Bohuslavskyi, L. Bourdet, Sylvain Barraud, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, C. Bauerle, Tristan Meunier, Silvano De Franceschi, Maud Vinet

Proceedings of the 48th European Solid-State Device Research Conference, 2018

Towards scalable silicon quantum computing.

Maud Vinet, Louis Hutin, Benoit Bertrand, Heorhii Bohuslavskyi, Andrea Corna, Anthony Amisse, Alessandro Crippa, Léo Bourdet, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Marc Sanquer, Xavier Jehl, Yann-Michel Niquet, Silvano De Franceschi, Tristan Meunier

Proceedings of the 76th Device Research Conference, 2018

2017

SOI CMOS technology for quantum information processing.

Louis Hutin, Benoit Bertrand, Romain Maurand, Matias Urdampilleta, Baptiste Jadot, Heorhii Bohuslavskyi, L. Bourdet, Yann-Michel Niquet, Xavier Jehl, Sylvain Barraud, C. Bauerle, Tristan Meunier, Marc Sanquer, Silvano De Franceschi, Maud Vinet

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2016

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD.

Gabriel Mugny, F. G. Pereira, Denis Rideau, François Triozon, Yann-Michel Niquet, Marco Pala, D. Garetto, Christophe Delerue

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.

J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold

Proceedings of the 45th European Solid State Device Research Conference, 2015

2013

The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire.

Benoit Voisin, Benoit Roche, Eva Dupont-Ferrier, Benoit Sklénard, Manuel Cobian, Xavier Jehl, Olga Cueto, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi, Marc Sanquer

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Transport properties of strained silicon nanowires.

Yann-Michel Niquet, Christophe Delerue, Viet Hung Nguyen, Christophe Krzeminski, François Triozon

Proceedings of the 2012 European Solid-State Device Research Conference, 2012