Yongkang Han

According to our database, Yongkang Han authored at least 4 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu

IEEE J. Solid State Circuits, January, 2024

2023

An ADC-Less RRAM-Based Computing-in-Memory Macro With Binary CNN for Efficient Edge AI.

Yi Li, Jia Chen, Linfang Wang, Woyu Zhang, Zeyu Guo, Jun Wang, Yongkang Han, Zhi Li, Fei Wang, Chunmeng Dou, Xiaoxin Xu, Jianguo Yang, Zhongrui Wang, Dashan Shang

IEEE Trans. Circuits Syst. II Express Briefs, June, 2023

A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2021

Novel 15T SRAM Cell for Low Voltage High Reliability Application.

Yongkang Han, Yulin Zhao, Qiao Hu, Xuanzhi Liu, Bo Peng, Haijun Jiang, Jianguo Yang, Xiaoyong Xue

Proceedings of the 14th IEEE International Conference on ASIC, 2021