Zhongze Han

According to our database, Zhongze Han authored at least 14 papers between 2022 and 2026.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2026

A hybrid-tiling attention accelerator with a fully-pipelined balanced systolic array in 3D hybrid-bonding near-DRAM integration.

Zhongze Han, Hanghang Gao, Weizeng Li, Zhi Li, Zhidao Zhou, Yiman Wang, Junzhe Shen, Junyu Zhu, Bohan Wang, Jianguo Yang, Jinshan Yue, Hongyang Hu, Chunmeng Dou

Microelectron. J., 2026

A Scalable 1L2D Multi-Core Near-DRAM Computing Accelerator Based on 3D Hybrid Bonding for AI Models.

Zhongze Han, Yue Cao, Xuanzhi Liu, Jinhui Cheng, Jianguo Yang

IEICE Trans. Electron., 2026

Multi-source uncertainty guided semi-supervised multimodal tool wear recognition and prediction in extremely label-scarce scenarios.

Saixiyalatu Bao, Zhongze Han, Linran Chen, Zichen Qiu, Chaoyong Zhang

Expert Syst. Appl., 2026

Simulation-to-real transfer learning for bearing fault diagnosis across working conditions: A hybrid approach combining physical modeling and data-driven techniques.

Zhongze Han, Wenrui Xia, Weiming Shen, Qiuning Zhu, Hongqi Liu, Chaoyong Zhang

Adv. Eng. Informatics, 2026

A 12nm 4Mb 104.56-to-137.75TFLOPS/W Charge-Trap Transistor-Based Computing-in-Memory Macro Using Analog-Predict-Digital-Compute for AI Edge Devices.

Junzhe Shen, Zhidao Zhou, Wenfeng Zha, Zhi Li, Weizeng Li, Bohan Wang, Junyu Zhu, Hanghang Gao, Zhongze Han, Yiman Wang, Linfang Wang, Hongyang Hu, Qing Luo, Chunmeng Dou, Ming Liu

Proceedings of the IEEE International Solid-State Circuits Conference, 2026

30.6 A 16Mb 166.8TOPS/W Near-Memory Phase-Domain-Computing Ferroelectric NAND Flash for Approximate Nearest Neighbor Search on Edge Devices.

Weizeng Li, Bohan Wang, Zhidao Zhou, Junyu Zhu, Zhi Li, Junzhe Shen, Wenfeng Zha, Zhongze Han, Yiman Wang, Linfang Wang, Hongyang Hu, Qing Luo, Chunmeng Dou, Ming Liu

Proceedings of the IEEE International Solid-State Circuits Conference, 2026

A 1.2GHz 12.77GB/s/mm² 3D Two-DRAM-One-Logic Process-Near-Memory Chip for Edge LLM Applications.

Yue Cao, Jinghao Jiang, Haijun Jiang, Qian Zhang, Xuanzhi Liu, Jinhui Cheng, Zhongze Han, Xiping Jiang, Fengguo Zuo, Song Wang, Fujun Bai, Yixin Guo, Chunmeng Dou, Jianguo Yang, Hangbing Lv, Qi Liu, Ming Liu

Proceedings of the IEEE International Solid-State Circuits Conference, 2026

A BEOL Ferroelectric FET-based Computing Unit for Digital Computing-in-Memory.

Junyu Zhu, Zexue Bian, Weizeng Li, Junzhe Shen, Hanghang Gao, Zhidao Zhou, Zhongze Han, Zhi Li, Hongyang Hu, Qing Luo, Chunmeng Dou

Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

2025

An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors.

Weizeng Li, Zhidao Zhou, Linfang Wang, Junyu Zhu, Junzhe Shen, Hongyang Hu, Baihan Wang, Zhi Li, Wang Ye, Zhongze Han, Hanghang Gao, Chunmeng Dou

Sci. China Inf. Sci., 2025

2024

A 1024-Spin Scalable Ising Machine With Capacitive Coupling and Progressive Annealing Method for Combination Optimization Problems.

Yixuan Liu, Zhongze Han, Qiqiao Wu, Honghu Yang, Yue Cao, Yongkang Han, Haijun Jiang, Xiaoyong Xue, Jianguo Yang, Xiaoyang Zeng

IEEE Trans. Circuits Syst. II Express Briefs, December, 2024

A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu

IEEE J. Solid State Circuits, January, 2024

2023

A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory.

Yulin Zhao, Yuan Wang, Donglin Zhang, Zhongze Han, Qiao Hu, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Qing Luo, Jianguo Yang, Hangbing Lv

Sci. China Inf. Sci., May, 2023

A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022

A 0.02% Accuracy Loss Voltage-Mode Parallel Sensing Scheme for RRAM-Based XNOR-Net Application.

Yulin Zhao, Jie Yu, Donglin Zhang, Qiao Hu, Xuanzhi Liu, Haijun Jiang, Qingting Ding, Zhongze Han, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Hongfei Lu, Xiaoxin Xu, Jianguo Yang

IEEE Trans. Circuits Syst. II Express Briefs, 2022