Zhongze Han

According to our database, Zhongze Han authored at least 4 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu

IEEE J. Solid State Circuits, January, 2024

2023

A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory.

Yulin Zhao, Yuan Wang, Donglin Zhang, Zhongze Han, Qiao Hu, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Qing Luo, Jianguo Yang, Hangbing Lv

Sci. China Inf. Sci., May, 2023

A 9Mb HZO-Based Embedded FeRAM with 10¹²-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022

A 0.02% Accuracy Loss Voltage-Mode Parallel Sensing Scheme for RRAM-Based XNOR-Net Application.

Yulin Zhao, Jie Yu, Donglin Zhang, Qiao Hu, Xuanzhi Liu, Haijun Jiang, Qingting Ding, Zhongze Han, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Hongfei Lu, Xiaoxin Xu, Jianguo Yang

IEEE Trans. Circuits Syst. II Express Briefs, 2022