Yunfei En

According to our database1, Yunfei En authored at least 15 papers between 2008 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2021
Area-Efficient Extended 3-D Inductor Based on TSV Technology for RF Applications.
IEEE Trans. Very Large Scale Integr. Syst., 2021

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs.
IEEE Access, 2021

2020
Broadband Circularly Polarized Cross-Dipole Antenna With Multiple Modes.
IEEE Access, 2020

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET.
IEEE Access, 2020

A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Wideband Circularly Polarized Cross-Dipole Antenna With Parasitic Elements.
IEEE Access, 2019

Scaling Behaviour of State-to-State Coupling During Hole Trapping at Si/SiO2.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface.
Microelectron. Reliab., 2018

2017
Movable Noncontact RF Current Measurement on a PCB Trace.
IEEE Trans. Instrum. Meas., 2017

Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs.
Microelectron. Reliab., 2017

Quality Evaluation of Digital Soft IP Core for FPGA System.
Proceedings of the 2017 IEEE International Conference on Software Quality, 2017

2015
A failure physics model for hardware Trojan detection based on frequency spectrum analysis.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2010
Total-dose-induced edge effect in SOI NMOS transistors with different layouts.
Microelectron. Reliab., 2010

2008
The irradiation effect of DC-DC power converter under X-ray.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2008


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