Rui Gao

According to our database, Rui Gao authored at least 6 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A Pragmatic Model to Predict Future Device Aging.

James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang

IEEE Access, 2023

2021

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs.

Chao Peng, Rui Gao, Zhifeng Lei, Zhangang Zhang, Yiqiang Chen, Yunfei En, Yun Huang

IEEE Access, 2021

2020

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET.

Chao Peng, Zhifeng Lei, Rui Gao, Zhangang Zhang, Yiqiang Chen, Yunfei En, Yun Huang

IEEE Access, 2020

"Shift and Match" (S...M) method for channel mobility correction in degraded MOSFETs.

Linglin Jing, Rui Gao, Zhigang Ji, Runsheng Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs.

Rui Gao, Mehzabeen Mehedi, Haibao Chen, Xinsheng Wang, Jianfu Zhang, Xiaoling Lin, Zhiyuan He, Yiqiang Chen, Dengyun Lei, Yun Huang, Yunfei En, Zhigang Ji, Runsheng Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

An assessment of RTN-induced threshold voltage jitter.

Jianfu Zhang, Azrif Manut, Rui Gao, Mehzabeen Mehedi, Zhigang Ji, Weidong Zhang, John S. Marsland

Proceedings of the 13th IEEE International Conference on ASIC, 2019