Jianfu Zhang

Affiliations:
  • Liverpool John Moores University, Department of Electronics and Electrical Engineering, UK


According to our database1, Jianfu Zhang authored at least 16 papers between 2010 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2021
On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude.
IEEE Access, 2021

Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing.
IEEE Access, 2021

Understanding Generated RTN as an Entropy Source for True Random Number Generators.
Proceedings of the International Conference on IC Design and Technology, 2021

An integrated method for extracting the statistical distribution of RTN time constants.
Proceedings of the 14th IEEE International Conference on ASIC, 2021

True random number generator based on switching probability of volatile GeXSe1-X ovonic threshold switching selectors.
Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020
An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants.
IEEE Access, 2020

A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Voltage step stress: a technique for reducing test time of device ageing.
Proceedings of the International Conference on IC Design and Technology, 2019

An assessment of RTN-induced threshold voltage jitter.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction.
Microelectron. Reliab., 2018

2017
Hot carrier aging of nano-scale devices: Characterization method, statistical variation, and their impact on use voltage.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015
ESD characterization of planar InGaAs devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

NBTI prediction and its induced time dependent variation.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations.
Microelectron. Reliab., 2014

Energy distribution of positive charges in high-k dielectric.
Microelectron. Reliab., 2014

2010
NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations.
Microelectron. Reliab., 2010


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