Yusuke Iguchi

According to our database, Yusuke Iguchi authored at least 10 papers between 2007 and 2011.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2011

Design Choice in 45-nm Dual-Port SRAM - 8T, 10T Single End, and 10T Differential.

Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Shunsuke Okumura, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto

IPSJ Trans. Syst. LSI Des. Methodol., 2011

2010

Fixed Point Data Type Modeling for High Level Synthesis.

Benjamin Carrión Schäfer, Yusuke Iguchi, Wataru Takahashi, Shingo Nagatani, Kazutoshi Wakabayashi

IEICE Trans. Electron., 2010

2009

A Dependable SRAM with 7T/14T Memory Cells.

Hidehiro Fujiwara, Shunsuke Okumura, Yusuke Iguchi, Hiroki Noguchi, Hiroshi Kawaguchi, Masahiko Yoshimoto

IEICE Trans. Electron., 2009

A 7T/14T Dependable SRAM and its Array Structure to Avoid Half Selection.

Hidehiro Fujiwara, Shunsuke Okumura, Yusuke Iguchi, Hiroki Noguchi, Hiroshi Kawaguchi, Masahiko Yoshimoto

Proceedings of the VLSI Design 2009: Improving Productivity through Higher Abstraction, 2009

A 0.56-V 128kb 10T SRAM using column line assist (CLA) scheme.

Shunsuke Okumura, Yusuke Iguchi, Shusuke Yoshimoto, Hidehiro Fujiwara, Hiroki Noguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto

Proceedings of the 10th International Symposium on Quality of Electronic Design (ISQED 2009), 2009

2008

A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing.

Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Shunsuke Okumura, Yasuhiro Morita, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto

IEICE Trans. Electron., 2008

Quality of a Bit (QoB): A New Concept in Dependable SRAM.

Hidehiro Fujiwara, Shunsuke Okumura, Yusuke Iguchi, Hiroki Noguchi, Yasuhiro Morita, Hiroshi Kawaguchi, Masahiko Yoshimoto

Proceedings of the 9th International Symposium on Quality of Electronic Design (ISQED 2008), 2008

2007

Area Optimization in 6T and 8T SRAM Cells Considering <i>V</i>_th Variation in Future Processes.

Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Yusuke Iguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto

IEICE Trans. Electron., 2007

Area Comparison between 6T and 8T SRAM Cells in Dual-<i>V</i>_dd Scheme and DVS Scheme.

Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Yusuke Iguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2007

A 10T Non-Precharge Two-Port SRAM for 74% Power Reduction in Video Processing.

Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Yasuhiro Morita, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto

Proceedings of the 2007 IEEE Computer Society Annual Symposium on VLSI (ISVLSI 2007), 2007