Hidehiro Fujiwara
According to our database1,
Hidehiro Fujiwara
authored at least 43 papers
between 2006 and 2024.
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Bibliography
2024
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., April, 2024
20.1 NVE: A 3nm 23.2TOPS/W 12b-Digital-CIM-Based Neural Engine for High-Resolution Visual-Quality Enhancement on Smart Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm<sup>2</sup> and 3.78Mb/mm<sup>2</sup> Fully-Digital Compute-in-Memory Macro Supporting INT12 × INT12 with a Parallel-MAC Architecture and Foundry 6T-SRAM Bit Cell.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 5-nm 254-TOPS/W 221-TOPS/mm<sup>2</sup> Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V<sub>MIN</sub> Applications.
IEEE J. Solid State Circuits, 2021
A 5nm 5.7GHz@1.0V and 1.3GHz@0.5V 4kb Standard-Cell- Based Two-Port Register File with a 16T Bitcell with No Half-Selection Issue.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
An 89TOPS/W and 16.3TOPS/mm<sup>2</sup> All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 7nm 2.1GHz Dual-Port SRAM with WL-RC Optimization and Dummy-Read-Recovery Circuitry to Mitigate Read- Disturb-Write Issue.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2018
A 28-nm 1R1W Two-Port 8T SRAM Macro With Screening Circuitry Against Read Disturbance and Wordline Coupling Noise Failures.
IEEE Trans. Very Large Scale Integr. Syst., 2018
2017
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2016
A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016
2015
17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation.
IEICE Trans. Electron., 2014
A 40-nm resilient cache memory for dynamic variation tolerance with bit-enhancing memory and on-chip diagnosis structures delivering ×91 failure rate improvement.
Proceedings of the Fifteenth International Symposium on Quality Electronic Design, 2014
Assessing uniqueness and reliability of SRAM-based Physical Unclonable Functions from silicon measurements in 45-nm bulk CMOS.
Proceedings of the Fifteenth International Symposium on Quality Electronic Design, 2014
2013
A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage with multi-Vt asymmetric halo MOS and write assist circuitry.
Proceedings of the International Symposium on Quality Electronic Design, 2013
A 28nm high density 1R/1W 8T-SRAM macro with screening circuitry against read disturb failure.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013
2012
A 0.15-µm FD-SOI Substrate Bias Control SRAM with Inter-Die Variability Compensation Scheme.
IEICE Trans. Electron., 2012
IEICE Trans. Commun., 2012
A stable chip-ID generating physical uncloneable function using random address errors in SRAM.
Proceedings of the IEEE 25th International SOC Conference, 2012
A 28nm 360ps-access-time two-port SRAM with a time-sharing scheme to circumvent read disturbs.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
Proceedings of the Thirteenth International Symposium on Quality Electronic Design, 2012
A Test Screening Method for 28 nm HK/MG Single-Port and Dual-Port SRAMs Considering with Dynamic Stability and Read/Write Disturb Issues.
Proceedings of the 21st IEEE Asian Test Symposium, 2012
2011
A 28 nm Dual-Port SRAM Macro With Screening Circuitry Against Write-Read Disturb Failure Issues.
IEEE J. Solid State Circuits, 2011
IPSJ Trans. Syst. LSI Des. Methodol., 2011
Proceedings of the 2011 International Symposium on Low Power Electronics and Design, 2011
2010
Dependable SRAM with enhanced read-/write-margins by fine-grained assist bias control for low-voltage operation.
Proceedings of the Annual IEEE International SoC Conference, SoCC 2010, 2010
2009
Proceedings of the VLSI Design 2009: Improving Productivity through Higher Abstraction, 2009
Proceedings of the 10th International Symposium on Quality of Electronic Design (ISQED 2009), 2009
2008
Novel Video Memory Reduces 45% of Bitline Power Using Majority Logic and Data-Bit Reordering.
IEEE Trans. Very Large Scale Integr. Syst., 2008
IEICE Trans. Electron., 2008
Proceedings of the 9th International Symposium on Quality of Electronic Design (ISQED 2008), 2008
2007
Area Optimization in 6T and 8T SRAM Cells Considering <i>V</i><sub>th</sub> Variation in Future Processes.
IEICE Trans. Electron., 2007
Area Comparison between 6T and 8T SRAM Cells in Dual-<i>V</i><sub>dd</sub> Scheme and DVS Scheme.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2007
Proceedings of the 2007 IEEE Computer Society Annual Symposium on VLSI (ISVLSI 2007), 2007
2006
A 0.3-V Operating, <i>V</i><sub>th</sub>-Variation-Tolerant SRAM under DVS Environment for Memory-Rich SoC in 90-nm Technology Era and Beyond.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2006
A two-port SRAM for real-time video processor saving 53% of bitline power with majority logic and data-bit reordering.
Proceedings of the 2006 International Symposium on Low Power Electronics and Design, 2006