Alphonse Torres

According to our database, Alphonse Torres authored at least 3 papers between 2009 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, Alphonse Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.

William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, Alphonse Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2009

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.

Claire Fenouillet-Béranger, Pierre Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, Loan Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, Alphonse Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki

Proceedings of the 35th European Solid-State Circuits Conference, 2009