L. Tosti

According to our database, L. Tosti authored at least 5 papers between 2009 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate.

Mauro Menichelli, L. Antognini, A. Bashiri, M. Bizzarri, L. Calcagnile, M. Caprai, Anna Paola Caricato, R. Catalano, G. A. P. Cirrone, Tommaso Croci, G. Cuttone, S. Dunand, M. Fabi, Luca Frontini, C. Grimani, Maria Ionica, Keida Kanxheri, M. Large, Valentino Liberali, M. Martino, G. Maruccio, G. Mazza, A. G. Monteduro, Arianna Morozzi, Francesco Moscatelli, S. Pallotta, A. Papi, Daniele Passeri, M. Pedio, M. Petasecca, G. Petringa, F. Peverini, L. Piccolo, Pisana Placidi, G. Quarta, S. Rizzato, G. Rossi, F. Sabbatini, Alberto Stabile, Leonello Servoli, Cinzia Talamonti, L. Tosti, M. Villani, R. J. Wheadon, Nicolas Wyrsch, N. Zema

Proceedings of the 9th International Workshop on Advances in Sensors and Interfaces, 2023

2019

Characterization and development of NUV SiPMs for INFN optical modules for the SCT Medium Size Telescope proposed for the CTA Observatory.

Giovanni Ambrosi, M. Ambrosio, Carla Aramo, B. Bertucci, Elisabetta Bissaldi, M. Bitossri, A. Boiano, Carmela Bonavolontà, M. Caprai, Leonardo Di Venere, E. Fiandrini, N. Giglietto, Francesco Giordano, Maria Ionica, Francesco Licciulli, Serena Loporchio, V. Masone, M. Mongelli, Francesca R. Pantaleo, R. Paoletti, A. Rugliancich, L. Stiaccini, L. Tosti, Valerio Vagelli, M. Valentino

Proceedings of the IEEE 8th International Workshop on Advances in Sensors and Interfaces, 2019

2014

FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration.

Claire Fenouillet-Béranger, Bernard Previtali, Perrine Batude, F. Nemouchi, Mikaël Cassé, Xavier Garros, L. Tosti, Nils Rambal, Dominique Lafond, H. Dansas, L. Pasini, Laurent Brunet, Fabien Deprat, M. Gregoire, M. Mellier, Maud Vinet

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.

Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2009

Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.

Claire Fenouillet-Béranger, P. Perreau, S. Denorme, L. Tosti, François Andrieu, Olivier Weber, S. Barnola, C. Arvet, Y. Campidelli, Sébastien Haendler, R. Beneyton, C. Perrot, C. de Buttet, P. Gros, L. Pham-Nguyen, F. Leverd, P. Gouraud, F. Abbate, F. Baron, A. Torres, C. Laviron, L. Pinzelli, J. Vetier, C. Borowiak, A. Margain, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Olivier Faynot, Thomas Skotnicki

Proceedings of the 35th European Solid-State Circuits Conference, 2009