Olivier Weber
Affiliations:- STMicroelectronics, Crolles, France
According to our database1,
Olivier Weber
authored at least 14 papers
between 2009 and 2023.
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Bibliography
2023
Proceedings of the IEEE International Memory Workshop, 2023
Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress.
Proceedings of the International Conference on IC Design and Technology, 2023
2021
16MB High Density Embedded PCM macrocell for automotive-grade microcontroller in 28nm FD-SOI, featuring extension to 24MB for Over-The-Air software update.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
2019
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
2017
FDSOI vs FinFET: differentiating device features for ultra low power & IoT applications.
Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017
2016
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
2015
Proceedings of the 2015 International Conference on IC Design & Technology, 2015
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014
2012
Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below.
J. Low Power Electron., 2012
2009
Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below.
Proceedings of the 35th European Solid-State Circuits Conference, 2009