Farzan Jazaeri

According to our database, Farzan Jazaeri authored at least 14 papers between 2013 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Noise-Aware FET Circuit Design Based on C/I_D-Invariant.

Asif Wahid, Jacob Atkinson, Rajath Bindiganavile, Farzan Jazaeri, Armin Tajalli

IEEE Trans. Circuits Syst. II Express Briefs, July, 2023

2022

Tunneling Current Through a Double Quantum Dots System.

Amin Rassekh, Majid Shalchian, Jean-Michel Sallese, Farzan Jazaeri

IEEE Access, 2022

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology.

Hung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Zhixing Zhao, Steffen Lehmann, Claudia Kretzschmar, Edoardo Charbon, Christian C. Enz

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing.

Hung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Andrea Baschirotto, Edoardo Charbon, Christian C. Enz

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics.

Farzan Jazaeri, Arnout Beckers, Armin Tajalli, Jean-Michel Sallese

Proceedings of the 26th International Conference on Mixed Design of Integrated Circuits and Systems, 2019

Cryogenic MOSFET Threshold Voltage Model.

Arnout Beckers, Farzan Jazaeri, Christian C. Enz

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs.

Nikolaos Makris, Matthias Bucher, Farzan Jazaeri, Jean-Michel Sallese

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs.

C.-M. Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini, Giulio Borghello, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz

Proceedings of the 47th European Solid-State Device Research Conference, 2017

Negative capacitance field effect transistors; capacitance matching and non-hysteretic operation.

Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu

Proceedings of the 47th European Solid-State Device Research Conference, 2017

Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing.

Arnout Beckers, Farzan Jazaeri, Andrea Ruffino, Claudio Bruschini, Andrea Baschirotto, Christian C. Enz

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC.

Alessandro Pezzotta, C.-M. Zhang, Farzan Jazaeri, Claudio Bruschini, Giulio Borghello, Federico Faccio, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

FOSS EKV 2.6 parameter extractor.

Wladek Grabinski, Daniel Tomaszewski, Farzan Jazaeri, Anurag Mangla, Jean-Michel Sallese, Maria-Anna Chalkiadaki, Antonios Bazigos, Matthias Bucher

Proceedings of the 22nd International Conference Mixed Design of Integrated Circuits & Systems, 2015

2013

Heavily doped junctionless vertical slit FETs with slit width Below 20 nm.

Lucian Barbut, Farzan Jazaeri, Didier Bouvet, Jean-Michel Sallese

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013

Design space of twin gate junctionless vertical slit field effect transistors.

Lucian Barbut, Farzan Jazaeri, Didier Bouvet, Jean-Michel Sallese

Proceedings of the 20th International Conference Mixed Design of Integrated Circuits and Systems, 2013