Mario Lanza

According to our database, Mario Lanza authored at least 16 papers between 2007 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2023

Variability in Resistive Memories.

Juan Bautista Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia Bargallo González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua

Adv. Intell. Syst., June, 2023

2022

2022 roadmap on neuromorphic computing and engineering.

Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Steve B. Furber, Emre Neftci, Franz Scherr, Wolfgang Maass, Srikanth Ramaswamy, Jonathan Tapson, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Gabriella Panuccio, Mufti Mahmud, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds

Neuromorph. Comput. Eng., 2022

Skyrmion-based Leaky Integrate and Fire Neurons for Neuromorphic Applications.

Aijaz H. Lone, Selma Amara, Fernando L. Aguirre, Mario Lanza, Hossein Fariborzi

CoRR, 2022

Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems.

Kaichen Zhu, Mohammad Reza Mahmoodi, Zahra Fahimi, Yiping Xiao, Tao Wang, Kristýna Bukvisová, Miroslav Kolíbal, Juan Bautista Roldán, David Perez, Fernando L. Aguirre, Mario Lanza

Adv. Intell. Syst., 2022

2021

2021 Roadmap on Neuromorphic Computing and Engineering.

Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Emre Neftci, Srikanth Ramaswamy, Jonathan Tapson, Franz Scherr, Wolfgang Maass, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds

CoRR, 2021

Time series modeling of the cycle-to-cycle variability in h-BN based memristors.

Juan Bautista Roldán, David Maldonado, Francisco J. Alonso, Andrés M. Roldán, Fei Hui, Yuanyuan Shi, Francisco Jiménez-Molinos, Ana M. Aguilera, Mario Lanza

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages.

Juan Bautista Roldán, David Maldonado, Francisco Jiménez-Molinos, Christian Acal, Juan Eloy Ruiz-Castro, Ana M. Aguilera, Fei Hui, J. Kong, Y. Shi, Xu Jing, Chao Wen, Marco Antonio Villena, Mario Lanza

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks.

David Maldonado, Juan Bautista Roldán, Andrés M. Roldán, Francisco Jiménez-Molinos, Fei Hui, Y. Shi, Xu Jing, Chao Wen, Mario Lanza

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Tristate Resistive Switching in Heterogenous Van Der Waals Dielectric Structures.

Kaichen Zhu, Xianhu Liang, Bin Yuan, Marco A. Villena, Chao Wen, Tao Wang, Shaochuan Chen, Mario Lanza, Fei Hui, Yuanyuan Shi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity.

Xianhu Liang, Bin Yuan, Yuanyuan Shi, Fei Hui, Xu Jing, Mario Lanza, Felix Palumbo

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Equivalent circuit model for the electron transport in 2D resistive switching material systems.

Enrique Miranda, Jordi Suñé, Chengbin Pan, Marco A. Villena, Na Xiao, Mario Lanza

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2013

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.

Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt

Microelectron. Reliab., 2013

2012

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO₂/Pt structures.

Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen

Microelectron. Reliab., 2012

2010

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements.

Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton

Microelectron. Reliab., 2010

2009

Trapped charge and stress induced leakage current (SILC) in tunnel SiO₂ layers of de-processed MOS non-volatile memory devices observed at the nanoscale.

Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani

Microelectron. Reliab., 2009

2007

Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM.

Mario Lanza, Marc Porti, Montserrat Nafría, Guenther Benstetter, Werner Frammelsberger, Heiko Ranzinger, E. Lodermeier, G. Jaschke

Microelectron. Reliab., 2007