Gilles Gasiot

According to our database1, Gilles Gasiot authored at least 13 papers between 2008 and 2017.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2017
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs.
Microelectron. Reliab., 2017

2016
30% static power improvement on ARM Cortex<sup>®</sup>-A53 using static biasing-anticipation.
Proceedings of the ESSCIRC Conference 2016: 42<sup>nd</sup> European Solid-State Circuits Conference, 2016

2015
ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure.
Microelectron. Reliab., 2015

Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation test.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors.
Proceedings of the ESSCIRC Conference 2015, 2015

2014
Real-time soft-error rate measurements: A review.
Microelectron. Reliab., 2014

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits.
Microelectron. Reliab., 2014

2012
A 0.32V, 55fJ per bit access energy, CMOS 65nm bit-interleaved SRAM with radiation Soft Error tolerance.
Proceedings of the IEEE International Conference on IC Design & Technology, 2012

A 65nm SRAM achieving 250mV retention and 350mV, 1MHz, 55fJ/bit access energy, with bit-interleaved radiation Soft Error tolerance.
Proceedings of the 38th European Solid-State Circuit conference, 2012

2010
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level.
Microelectron. Reliab., 2010

2008
Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOS.
Proceedings of the 14th IEEE International On-Line Testing Symposium (IOLTS 2008), 2008


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