Jean-Luc Autran

According to our database1, Jean-Luc Autran authored at least 20 papers between 2010 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2018
A 2.7 pJ/cycle 16 MHz, 0.7 µW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI.
IEEE J. Solid State Circuits, 2018

Q-Learning-based Adaptive Power Management for IoT System-on-Chips with Embedded Power States.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

A 140 nW, 32.768 kHz, 1.9 ppm/°C Leakage-Based Digitally Relocked Clock Reference with 0.1 ppm Long-Term Stability in 28nm FD-SOI.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2017
Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation.
Microelectron. Reliab., 2017

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs.
Microelectron. Reliab., 2017

A 2.7pJ/cycle 16MHz SoC with 4.3nW power-off ARM Cortex-M0+ core in 28nm FD-SOI.
Proceedings of the 43rd IEEE European Solid State Circuits Conference, 2017

A 0.40pJ/cycle 981 μm<sup>2</sup> voltage scalable digital frequency generator for SoC clocking.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017

2016
Natural radiation events in CCD imagers at ground level.
Microelectron. Reliab., 2016

A 28nm FD-SOI standard cell 0.6-1.2V open-loop frequency multiplier for low power SoC clocking.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2016

On-chip supply power measurement and waveform reconstruction in a 28nm FD-SOI processor SoC.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016

2015
3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs.
Microelectron. Reliab., 2015

SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation.
Microelectron. Reliab., 2015

ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure.
Microelectron. Reliab., 2015

Radiation and COTS at ground level.
Microelectron. Reliab., 2015

Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation.
Microelectron. Reliab., 2014

Real-time soft-error rate measurements: A review.
Microelectron. Reliab., 2014

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits.
Microelectron. Reliab., 2014

2010
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level.
Microelectron. Reliab., 2010


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