Jean-Luc Autran
Orcid: 0000-0001-9893-014X
According to our database1,
Jean-Luc Autran
authored at least 22 papers
between 2010 and 2020.
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Bibliography
2020
Proceedings of the 15th Design & Technology of Integrated Systems in Nanoscale Era, 2020
2018
Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions.
Microelectron. Reliab., 2018
A 2.7 pJ/cycle 16 MHz, 0.7 µW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI.
IEEE J. Solid State Circuits, 2018
Q-Learning-based Adaptive Power Management for IoT System-on-Chips with Embedded Power States.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018
A 140 nW, 32.768 kHz, 1.9 ppm/°C Leakage-Based Digitally Relocked Clock Reference with 0.1 ppm Long-Term Stability in 28nm FD-SOI.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018
2017
Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation.
Microelectron. Reliab., 2017
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs.
Microelectron. Reliab., 2017
Proceedings of the 43rd IEEE European Solid State Circuits Conference, 2017
A 0.40pJ/cycle 981 μm<sup>2</sup> voltage scalable digital frequency generator for SoC clocking.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017
2016
Microelectron. Reliab., 2016
A 28nm FD-SOI standard cell 0.6-1.2V open-loop frequency multiplier for low power SoC clocking.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2016
On-chip supply power measurement and waveform reconstruction in a 28nm FD-SOI processor SoC.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016
2015
3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs.
Microelectron. Reliab., 2015
SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation.
Microelectron. Reliab., 2015
ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure.
Microelectron. Reliab., 2015
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
2014
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation.
Microelectron. Reliab., 2014
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits.
Microelectron. Reliab., 2014
2010
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level.
Microelectron. Reliab., 2010