Giuseppe Piccolboni

According to our database, Giuseppe Piccolboni authored at least 10 papers between 2020 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Relaxation-Aware Programming in RRAM: Evaluating and Optimizing Write Termination.

M. Correa Cueto, Bastien Giraud, M. Drouard, Giuseppe Piccolboni, Gabriel Molas, Gaël Pillonnet

Proceedings of the IEEE International Memory Workshop, 2025

2024

Smart Write Algorithm to Enhance Performances and Reliability of an RRAM Macro.

Bastien Giraud, Sebastien Ricavy, Cyrille Laffond, Ilan Sever, Valentin Gherman, Florent Lepin, Mariam Diallo, Khadija Zenati, Sylvain Dumas, Olivier Guille, Maxim Vershkov, Alessandro Bricalli, Giuseppe Piccolboni, Jean-Philippe Noel, Anass Samir, Gaël Pillonnet, Yvain Thonnart, Gabriel Molas

IEEE J. Solid State Circuits, September, 2024

Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors.

Henriette Padberg, Amir Regev, Giuseppe Piccolboni, Alessandro Bricalli, Gabriel Molas, Jean-Francois Nodin, Shahar Kvatinsky

IEEE Trans. Circuits Syst. II Express Briefs, January, 2024

2023

Fully Binarized, Parallel, RRAM-Based Computing Primitive for In-Memory Similarity Search.

Sandeep Kaur Kingra, Vivek Parmar, Deepak Verma, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, Amir Regev, Manan Suri

IEEE Trans. Circuits Syst. II Express Briefs, 2023

Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability.

Lucas Reganaz, Damien Deleruyelle, Quentin Rafhay, Joel Minguet Lopez, Niccolo Castellani, Jean-François Nodin, Alessandro Bricalli, Giuseppe Piccolboni, Gabriel Molas, François Andrieu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Demonstration of SMT-reflow Immune and SCA-resilient PUF on 28nm RRAM device array.

Vivek Parmar, Sandeep Kaur Kingra, Deepak Verma, Digamber Pandey, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Pares, Laurent Grenouillet, Jean-François Nodin, Manan Suri

Proceedings of the IEEE International Memory Workshop, 2023

Benefits of Design Assist Techniques on Performances and Reliability of a RRAM Macro.

Bastien Giraud, Sebastien Ricavy, Yasser Moursy, Cyrille Laffond, Ilan Sever, Valentin Gherman, Manuel Pezzin, Florent Lepin, Mariam Diallo, Khadija Zenati, Sylvain Dumas, Maxim Vershkov, Alessandro Bricalli, Giuseppe Piccolboni, Jean-Philippe Noël, Anass Samir, Gaël Pillonnet, Yvain Thonnart, Gabriel Molas

Proceedings of the IEEE International Memory Workshop, 2023

2022

High temperature stability embedded ReRAM for 2x nm node and beyond.

Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2022

2021

A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification.

Wolfgang Goes, D. Green, Philippe Blaise, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Molas, Jean-Francois Nodin

Proceedings of the IEEE International Memory Workshop, 2021

2020

Fully-Integrated Spiking Neural Network Using SiOx-Based RRAM as Synaptic Device.

Amir Regev, Alessandro Bricalli, Giuseppe Piccolboni, Alexandre Valentian, Thomas Mesquida, Gabriel Molas, Jean-François Nodin

Proceedings of the 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems, 2020