Joaquín Alvarado

According to our database, Joaquín Alvarado authored at least 6 papers between 2007 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2013

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models.

Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez

Microelectron. J., 2013

2012

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.

Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre

Microelectron. Reliab., 2012

2011

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer.

C. Roda Neve, Valeria Kilchytska, Joaquín Alvarado, Dimitri Lederer, O. Militaru, Denis Flandre, Jean-Pierre Raskin

Microelectron. Reliab., 2011

Characterization and modelling of single event transients in LDMOS-SOI FETs.

Joaquín Alvarado, Valeria Kilchytska, El Hafed Boufouss, Denis Flandre

Microelectron. Reliab., 2011

2010

Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs.

Joaquín Alvarado, El Hafed Boufouss, Valeria Kilchytska, Denis Flandre

Microelectron. Reliab., 2010

2007

Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs.

Joaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre

Microelectron. J., 2007