Seungjin Choo

According to our database, Seungjin Choo authored at least 5 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Machine Learning Based V-ramp VBD Predictive Model Using OCD-measured Fab Parameters for Early Detection of MOL Reliability Risk.

SungMan Rhee, Hyunjin Kim, Sangku Park, Taiki Uemura, Yuchul Hwang, Seungjin Choo, Jinju Kim, Hwasung Rhee, Shin-Young Chung

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Reverse Body Bias Dependence of HCI Reliability in Advanced FinFET.

Md Iqbal Mahmud, Rakesh Ranjan, Ki-Don Lee, Pavitra Ramadevi Perepa, Caleb Dongkyun Kwon, Seungjin Choo, Kihyun Choi

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic Technology.

Seongkyung Kim, Ukjin Jung, Seungjin Choo, Kihyun Choi, Tae-Jin Chung, Shin-Young Chung, Euncheol Lee, Juhun Park, Deokhan Bae, Myungyoon Um

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2018

Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.

Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL.

Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park

Proceedings of the IEEE International Reliability Physics Symposium, 2015