Junghyun Shin
According to our database1,
Junghyun Shin
authored at least 5 papers
between 2019 and 2024.
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Bibliography
2024
13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization.
IEEE J. Solid State Circuits, 2023
2022
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2020
22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
Proceedings of the IEEE International Solid- State Circuits Conference, 2019