Seonhong Kim

According to our database, Seonhong Kim authored at least 3 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization.

Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee, Yeonho Lee, Jae-Hyung Park, Su-Hyun Oh, Yucheon Ju, Chunseok Jeong, Ho Sung Cho, Jaeseung Lee, Tae-Sik Yun, Jin Hee Cho, Sangmuk Oh, Junil Moon, Young-Jun Park, Hong-Seok Choi, In-Keun Kim, Seung Min Yang, Sun-Yeol Kim, Jaemin Jang, Jinwook Kim, Seong-Hee Lee, Younghyun Jeon, Juhyung Park, Tae-Kyun Kim, Dongyoon Ka, Sanghoon Oh, Jinse Kim, Junyeol Jeon, Seonhong Kim, Kyeong Tae Kim, Taeho Kim, Hyeonjin Yang, Dongju Yang, Minseop Lee, Heewoong Song, Dongwook Jang, Junghyun Shin, Hyunsik Kim, Chang-Ki Baek, Hajun Jeong, Jongchan Yoon, Seung-Kyun Lim, Kyo Yun Lee, Young Jun Koo, Myeong-Jae Park, Joohwan Cho, Jonghwan Kim

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2018

A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) and a Resolution FoM of 0.43 pJ⋅K² in 65-nm CMOS.

Woojun Choi, Yong-Tae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, Junhyun Chun, Kofi A. A. Makinwa, Youngcheol Chae

IEEE J. Solid State Circuits, 2018

A 0.53pJK² 7000μm² resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS.

Woojun Choi, Yong-Tae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, Junhyun Chun, Kofi A. A. Makinwa, Youngcheol Chae

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018