Longda Zhou

According to our database, Longda Zhou authored at least 6 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies.

Da Wang, Yong Liu, Pengpeng Ren, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology.

Yong Liu, Pengpeng Ren, Da Wang, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.

Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.

Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.

Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020