Longda Zhou

Orcid: 0000-0001-8969-1458

According to our database1, Longda Zhou authored at least 8 papers between 2020 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020


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