Pengpeng Ren

According to our database1, Pengpeng Ren authored at least 13 papers between 2015 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2023
Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., April, 2023

Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing.
IEEE Access, 2021

2018
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.
Microelectron. Reliab., 2018

New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator.
Proceedings of the 2017 IEEE/ACM International Conference on Computer-Aided Design, 2017

2016
Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life.
Proceedings of the International Conference on IC Design and Technology, 2016

2015
Duty cycle shift under static/dynamic aging in 28nm HK-MG technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2015


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