C. R. Parthasarathy

According to our database, C. R. Parthasarathy authored at least 9 papers between 2005 and 2017.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2017

Cognitive approach to support dynamic aging compensation.

Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix

Proceedings of the IEEE International Test Conference, 2017

Dynamic aging compensation and Safety measures in Automotive environment.

Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix

Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017

2016

Activity profiling: Review of different solutions to develop reliable and performant design.

Florian Cacho, Ahmed Benhassain, Souhir Mhira, Ajith Sivadasan, Vincent Huard, P. Cathelin, Vincent Knopik, Abhishek Jain, C. R. Parthasarathy, Lorena Anghel

Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016

2015

Timing in-situ monitors: Implementation strategy and applications results.

Ahmed Benhassain, Florian Cacho, Vincent Huard, M. Saliva, Lorena Anghel, C. R. Parthasarathy, Abhishek Jain, Fabien Giner

Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015

2007

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.

C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard

Proceedings of the Integrated Circuit and System Design. Power and Timing Modeling, 2007

2006

Designing in reliability in advanced CMOS technologies.

C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix

Microelectron. Reliab., 2006

NBTI degradation: From physical mechanisms to modelling.

Vincent Huard, M. Denais, C. R. Parthasarathy

Microelectron. Reliab., 2006

2005

A thorough investigation of MOSFETs NBTI degradation.

Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent

Microelectron. Reliab., 2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.

Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2005