Alain Bravaix

According to our database, Alain Bravaix authored at least 30 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.

Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes.

Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling.

Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS.

Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Process Optimization for HCI Improvement in I/O Analog Devices.

Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Resilient automotive products through process, temperature and aging compensation schemes.

Souhir Mhira, Vincent Huard, D. Arora, Philippe Flatresse, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Key parameters driving transistor degradation in advanced strained SiGe channels.

Vincent Huard, Cheikh Ndiaye, M. Arabi, Narendra Parihar, X. Federspiel, Souhir Mhira, S. Mahapatra, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Managing electrical reliability in consumer systems for improved energy efficiency.

Vincent Huard, Souhir Mhira, A. Barclais, X. Lecocq, F. Raugi, M. Cantournet, Alain Bravaix

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Enabling robust automotive electronic components in advanced CMOS nodes.

Vincent Huard, Souhir Mhira, Florian Cacho, Alain Bravaix

Microelectron. Reliab., 2017

Cognitive approach to support dynamic aging compensation.

Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, David Meyer, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix

Proceedings of the IEEE International Test Conference, 2017

Dynamic aging compensation and Safety measures in Automotive environment.

Souhir Mhira, Vincent Huard, Ahmed Benhassain, Florian Cacho, Sylvie Naudet, Abhishek Jain, C. R. Parthasarathy, Alain Bravaix

Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017

2016

Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes.

Cheikh Ndiaye, Vincent Huard, X. Federspiel, Florian Cacho, Alain Bravaix

Microelectron. Reliab., 2016

Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes.

Alain Bravaix, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Vincent Huard

Microelectron. Reliab., 2016

Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes.

Alain Bravaix, M. Saliva, Florian Cacho, X. Federspiel, Cheikh Ndiaye, Souhir Mhira, Edith Kussener, E. Pauly, Vincent Huard

Proceedings of the 22nd IEEE International Symposium on On-Line Testing and Robust System Design, 2016

2015

Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology.

M. Saliva, Florian Cacho, Cheikh Ndiaye, Vincent Huard, D. Angot, Alain Bravaix, Lorena Anghel

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI.

M. Saliva, Florian Cacho, Vincent Huard, X. Federspiel, D. Angot, Ahmed Benhassain, Alain Bravaix, Lorena Anghel

Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015

2012

Microscopic scale characterization and modeling of transistor degradation under HC stress.

Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix

Microelectron. Reliab., 2012

2009

Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics.

F. Molière, B. Foucher, Philippe Perdu, Alain Bravaix

Microelectron. Reliab., 2009

Reliability aspects of gate oxide under ESD pulse stress.

Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix

Microelectron. Reliab., 2009

2007

Degradation mechanism understanding of NLDEMOS SOI in RF applications.

D. Lachenal, Alain Bravaix, Frederic Monsieur, Yannick Rey-Tauriac

Microelectron. Reliab., 2007

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.

C. R. Parthasarathy, Alain Bravaix, Chloe Guérin, M. Denais, Vincent Huard

Proceedings of the Integrated Circuit and System Design. Power and Timing Modeling, 2007

2006

Designing in reliability in advanced CMOS technologies.

C. R. Parthasarathy, M. Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix

Microelectron. Reliab., 2006

2005

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.

C. Trapes, Didier Goguenheim, Alain Bravaix

Microelectron. Reliab., 2005

Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology.

Yannick Rey-Tauriac, J. Badoc, B. Reynard, Raúl Andrés Bianchi, D. Lachenal, Alain Bravaix

Microelectron. Reliab., 2005

A thorough investigation of MOSFETs NBTI degradation.

Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent

Microelectron. Reliab., 2005

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.

Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin

Microelectron. Reliab., 2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.

Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2005

2004

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.

Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2004

2003

Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.

Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2003

2001

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.

Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2001