Didier Goguenheim

According to our database, Didier Goguenheim authored at least 12 papers between 2001 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2014

Distance measurement using narrowband ZigBee devices.

Florian Barrau, Bruno Paille, Edith Kussener, Didier Goguenheim

Proceedings of the 23rd Wireless and Optical Communication Conference, 2014

2009

Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities.

Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim

Microelectron. Reliab., 2009

2008

Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications.

D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim

Microelectron. Reliab., 2008

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO₂ thin oxides stressed to hard breakdown.

D. Pic, Didier Goguenheim, Jean-Luc Ogier

Microelectron. Reliab., 2008

2007

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories.

D. Pic, Didier Goguenheim, Jean-Luc Ogier

Microelectron. Reliab., 2007

Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions.

Didier Goguenheim, D. Pic, Jean-Luc Ogier

Microelectron. Reliab., 2007

2005

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.

C. Trapes, Didier Goguenheim, Alain Bravaix

Microelectron. Reliab., 2005

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.

Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin

Microelectron. Reliab., 2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.

Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2005

2004

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.

Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2004

2003

Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.

Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2003

2001

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.

Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2001