Malte Czernohorsky

According to our database, Malte Czernohorsky authored at least 7 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.

Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.

Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, D. Sourav, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, R. Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel

Proceedings of the IEEE International Memory Workshop, 2022

Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2.

Wenke Weinreich, Maximilian Lederer, Malte Czernohorsky

Proceedings of the International Conference on IC Design and Technology, 2022

2020

BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms.

Betting Wehring, Raik Hoffmann, Lukas Gerlich, Malte Czernohorsky, Benjamin Uhlig, Robert Seidel, Tobias Barchewitz, Frank Schlaphof, Lutz Meinshausen, Christoph Leyens

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.

Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.

Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

2018

CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures.

Clemens Mart, Wenke Weinreich, Malte Czernohorsky, Stefan Riedel, S. Zybell, Kü Kuhnel

Proceedings of the 48th European Solid-State Device Research Conference, 2018