Clemens Mart

According to our database, Clemens Mart authored at least 4 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies.

A. Viegas, K. Falidas, T. Ali, Kati Kühnel, R. Hoffmann, Clemens Mart, M. Czernohorsky, J. Heitmann

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.

Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF.

Sabine Kolodinski, Boli Peng, C. Esposito, Yves Zimmermann, Michael Schröter, Xin Xu, Paolo Valerio Testa, Corrado Carta, Frank Ellinger, Steffen Lehmann, M. Drescher, Clemens Mart, Maciej Wiatr, Wenke Weinreich, Violetta Sessi, Jens Trommer, Talha Chohan, Halid Mulaosmanovic, Walter M. Weber, Stefan Slesazeck

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

CMOS Compatible Pyroelectric Applications Enabled by Doped HfO2 Films on Deep-Trench Structures.

Clemens Mart, Wenke Weinreich, Malte Czernohorsky, Stefan Riedel, S. Zybell, Kü Kuhnel

Proceedings of the 48th European Solid-State Device Research Conference, 2018