Kati Kühnel

According to our database, Kati Kühnel authored at least 6 papers between 2019 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies.

A. Viegas, K. Falidas, T. Ali, Kati Kühnel, R. Hoffmann, Clemens Mart, M. Czernohorsky, J. Heitmann

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.

Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.

Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, D. Sourav, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, R. Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel

Proceedings of the IEEE International Memory Workshop, 2022

2021

High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application.

Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Hideki Maemura, Yusuke Shuto, Fumitaka Sugaya, Monica Materano, Tarek Ali, Maximilian Lederer, Kati Kühnel, Konrad Seidel, Uwe Schroeder, Thomas Mikolajick, Masanori Tsukamoto, Taku Umebayashi

Proceedings of the IEEE International Memory Workshop, 2021

2020

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.

Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.

Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019