Mo Chen

According to our database, Mo Chen authored at least 7 papers between 2016 and 2021.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2021

Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor.

Shuting Shi, Rui Chen, Rui Liu, Mo Chen, Chen Shen, Xuantian Li, Haonan Tian, Li Chen

J. Electron. Test., 2021

2018

Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree.

Yuanqing Li, Li Chen, Issam Nofal, Mo Chen, Haibin Wang, Rui Liu, Qingyu Chen, Milos Krstic, Shuting Shi, Gang Guo, Sang H. Baeg, Shi-Jie Wen, Richard Wong

Microelectron. Reliab., 2018

2017

BPPT - Bulk potential protection technique for hardened sequentials.

Issam Nofal, Adrian Evans, Anlin He, Gang Guo, Yuanqing Li, Li Chen, Rui Liu, Haibin Wang, Mo Chen, Sang H. Baeg, Shi-Jie Wen, Richard Wong

Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017

2016

A Built-in Single Event Upsets Detector for Sequential Cells.

Yuanqing Li, Haibin Wang, Lixiang Li, Li Chen, Rui Liu, Mo Chen

J. Electron. Test., 2016

A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets.

Yuanqing Li, Lixiang Li, Yuan Ma, Li Chen, Rui Liu, Haibin Wang, Qiong Wu, Michael Newton, Mo Chen

J. Electron. Test., 2016

An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology.

Qingyu Chen, Haibin Wang, Li Chen, Lixiang Li, Xing Zhao, Rui Liu, Mo Chen, Xuantian Li

J. Electron. Test., 2016

Instruction-Vulnerability-Factor-Based Reliability Analysis Model for Program Memory.

Qingyu Chen, Li Chen, Haibin Wang, Longsheng Wu, Yuanqing Li, Xing Zhao, Mo Chen

J. Electron. Test., 2016