Paul C. McIntyre

According to our database, Paul C. McIntyre authored at least 5 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

First Observation of Ultra-high Polarization (~ 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes.

F. Huang, B. Saini, L. Wan, H. Lu, X. He, S. Qin, Wilman Tsai, A. Gruverman, Andrew C. Meng, H.-S. Philip Wong, Paul C. McIntyre, S. S. Wong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Innovating at Speed and at Scale: A Next Generation Infrastructure for Accelerating Semiconductor Technologies.

Richard A. Gottscho, Edlyn V. Levine, Tsu-Jae King Liu, Paul C. McIntyre, Subhasish Mitra, Boris Murmann, Jan M. Rabaey, Sayeef S. Salahuddin, Willy C. Shih, H.-S. Philip Wong

CoRR, 2022

4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory.

Wei-Chen Chen, F. Huang, S. Qin, Z. Yu, Q. Lin, Paul C. McIntyre, S. S. Wong, H.-S. Philip Wong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics.

Y. K. Chang, P. J. Liao, S. H. Yeong, Y.-M. Lin, J. H. Lee, C. T. Lin, Z. Yu, Wilman Tsai, Paul C. McIntyre

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2019

3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation.

Junkyo Suh, Andrew C. Meng, Marc Jaikissoon, Michael Braun, Taeho R. Kim, Ann F. Marshall, Anahita Pakzad, Paul C. McIntyre, Krishna C. Saraswat

Proceedings of the Device Research Conference, 2019