Wilman Tsai

According to our database, Wilman Tsai authored at least 4 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

First Observation of Ultra-high Polarization (~ 108 μC/cm²) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes.

F. Huang, B. Saini, L. Wan, H. Lu, X. He, S. Qin, Wilman Tsai, A. Gruverman, Andrew C. Meng, H.-S. Philip Wong, Paul C. McIntyre, S. S. Wong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics.

Y. K. Chang, P. J. Liao, S. H. Yeong, Y.-M. Lin, J. H. Lee, C. T. Lin, Z. Yu, Wilman Tsai, Paul C. McIntyre

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) Accelerators.

Yandong Luo, Piyush Kumar, Yu-Ching Liao, William Hwang, Fen Xue, Wilman Tsai, Shan X. Wang, Azad Naeemi, Shimeng Yu

Proceedings of the IEEE International Memory Workshop, 2022

2019

Accelerating Deep Neural Networks in Processing-in-Memory Platforms: Analog or Digital Approach?

Shaahin Angizi, Zhezhi He, Dayane Alfenas Reis, Xiaobo Sharon Hu, Wilman Tsai, Shy Jay Lin, Deliang Fan

Proceedings of the 2019 IEEE Computer Society Annual Symposium on VLSI, 2019