Peide D. Ye

According to our database, Peide D. Ye authored at least 21 papers between 2015 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration.

Chun-An Shih, Mir Md Fahimul Islam, Sumi Lee, Peide D. Ye, Muhammad Ashraful Alam

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Analog Multilevel eDRAM-RRAM CIM for Zeroth-Order Fine-tuning of LLMs.

Mufeng Chen, Luqi Zheng, Jian-Yu Lin, Peide D. Ye, Haitong Li

Proceedings of the IEEE International Memory Workshop, 2025

2024

Enhancement of In2O3 Field-Effect Mobility Up To 152 cm².V^-1·s^-1Using HZO-Based Higher-k Linear Dielectric.

Zehao Lin, Chang Niu, Hyeongjun Jang, Taehyun Kim, Yizhi Zhang, Haiyan Wang, Changwook Jeong, Peide D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO.

Sumi Lee, Chang Niu, Yizhi Zhang, Haiyan Wang, Peide D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility.

Dongqi Zheng, Adam Charnas, Jian-Yu Lin, Jackson Anderson, Dana Weinstein, Peide D. Ye

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10¹¹, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability.

Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinghang Zhang, Haiyan Wang, Peide D. Ye

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing.

Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy.

Chunguang Wang, Jeffry Victor, Atanu K. Saha, X. Chen, M. Si, T. Sharma, K. Roy, Peide D. Ye, Sumeet Kumar Gupta

Proceedings of the Device Research Conference, 2023

2022

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide.

Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu, Peide D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10⁹ Cycles without VT Drift Penalty.

Zehao Lin, Mengwei Si, Peide D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs.

Pai-Ying Liao, Sami Alajlouni, Mengwei Si, Zhuocheng Zhang, Zehao Lin, Jinhyun Noh, Calista Wilk, Ali Shakouri, Peide D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure.

Adam Charnas, Jackson Anderson, Jie Zhang, Dongqi Zheng, Dana Weinstein, Peide D. Ye

Proceedings of the Device Research Conference, 2022

2019

Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack.

Mengwei Si, Xiao Lyu, Peide D. Ye

Proceedings of the Device Research Conference, 2019

2018

Low frequency noise in MOS2 negative capacitance field-effect transistor.

Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors.

Peide D. Ye

Proceedings of the 76th Device Research Conference, 2018

High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique.

Gang Qiu, Mengwei Si, Yixiu Wang, Xiao Lyu, Wenzhuo Wu, Peide D. Ye

Proceedings of the 76th Device Research Conference, 2018

The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond.

Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye

Proceedings of the 76th Device Research Conference, 2018

2D Ferroelectric CuInP₂S₆: Synthesis, ReRAM, and FeRAM.

Pai-Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye

Proceedings of the 76th Device Research Conference, 2018

Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs.

Wonil Chung, Mengwei Si, Peide D. Ye

Proceedings of the 76th Device Research Conference, 2018

Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors.

Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye

Proceedings of the 76th Device Research Conference, 2018

2015

Characterization and reliability of III-V gate-all-around MOSFETs.

Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye

Proceedings of the IEEE International Reliability Physics Symposium, 2015