R. Dreesen

According to our database, R. Dreesen authored at least 5 papers between 2001 and 2003.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2003

Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec's MCM-D discrete passives devices.

Philippe Soussan, G. Lekens, R. Dreesen, Ward De Ceuninck, Eric Beyne

Microelectron. Reliab., 2003

2002

High-resolution SILC measurements of thin SiO₂ at ultra low voltages.

Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger

Microelectron. Reliab., 2002

Statistical aspects of the degradation of LDD nMOSFETs.

E. Andries, R. Dreesen, Kris Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken, K. F. Lo, Marc D'Olieslaeger, Jan D'Haen

Microelectron. Reliab., 2002

2001

A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation.

R. Dreesen, Kris Croes, Jean Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken

Microelectron. Reliab., 2001

High-resolution in-situ of gold electromigration: test time reduction.

Kris Croes, R. Dreesen, Jean Manca, Ward De Ceuninck, Luc De Schepper, Luc Tielemans, P. J. van der Wel

Microelectron. Reliab., 2001