Robin Degraeve
Orcid: 0000-0002-4609-5573
According to our database1,
Robin Degraeve
authored at least 34 papers
between 1999 and 2023.
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Bibliography
2023
Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., July, 2023
Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Proceedings of the IEEE International Reliability Physics Symposium, 2022
2021
The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability.
Proceedings of the IEEE International Memory Workshop, 2021
2019
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS.
IEEE J. Solid State Circuits, 2019
Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
IACR Trans. Cryptogr. Hardw. Embed. Syst., 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate.
Proceedings of the 48th European Solid-State Device Research Conference, 2018
Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications.
Proceedings of the 48th European Solid-State Device Research Conference, 2018
Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit.
Proceedings of the 48th European Solid-State Device Research Conference, 2018
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018
2015
The defect-centric perspective of device and circuit reliability - From individual defects to circuits.
Proceedings of the 45th European Solid State Device Research Conference, 2015
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2014
As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability.
Microelectron. Reliab., 2014
2007
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability.
Microelectron. Reliab., 2007
Distribution and generation of traps in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> gate stacks.
Microelectron. Reliab., 2007
2006
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions.
Microelectron. Reliab., 2006
2005
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers.
Microelectron. Reliab., 2005
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance.
Microelectron. Reliab., 2005
2003
Microelectron. Reliab., 2003
2002
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study.
Microelectron. Reliab., 2002
Microelectron. Reliab., 2002
1999