Ruijun Lin

According to our database, Ruijun Lin authored at least 5 papers between 2022 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

DS-eDRAM: Mode-Adaptive Dynamic-Static 2T-1C HZO eDRAM with Temperature-Aware Operation and Shared-Path Sensing for Energy-Efficient SPM in AI Accelerators.

Ruijun Lin, Taoran Shen, Ruicong Zhang, Jie Yin, Li Xiong, Ming Wang, Xiaoyong Xue, Xiaoyang Zeng

Proceedings of the IEEE International Symposium on Circuits and Systems, 2026

2025

Booth-Assisted Mixed-Precision Reconfigurable Digital Computing-in-Memory Engine With Ternary-Input 1T2R ReRAM for Edge AI.

Ruijun Lin, Lixing Li, Shuyang Lv, Jingwen Jiang, Liang Meng, Zhiwang Guo, Jianguo Yang, Jun Han, Alex Zhou, Xiaoyong Xue, Xiaoyang Zeng

IEEE Trans. Circuits Syst. I Regul. Pap., December, 2025

2023

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance.

Xunming Zhang, Long Liu, Di Wang, Ruijun Lin, Heyong Yang, Xiaoxin Xu, Jianguo Yang, Guozhong Xing, Xiaoyong Xue, Xiaoyang Zeng

IEEE Trans. Circuits Syst. II Express Briefs, June, 2023

2022

A 2D2R ReRAM CIM accelerator for multilayer perceptron in visual classification applications.

Keji Zhou, Ruijun Lin, Zhiwang Guo, Yixuan Liu, Jingwen Jiang, Chenyang Zhao, Jinbei Fang, Xiaoxin Xu, Xiaoyong Xue, Xiaoyang Zeng

Microelectron. J., 2022

A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices.

Jianguo Yang, Ruijun Lin, Keji Zhou, Yuejun Zhang, Xiaoyong Xue, Hangbing Lv

Microelectron. J., 2022