Guozhong Xing

According to our database, Guozhong Xing authored at least 5 papers between 2021 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC.

Yiyang Yuan, Yiming Yang, Xinghua Wang, Xiaoran Li, Cailian Ma, Qirui Chen, Meini Tang, Xi Wei, Zhixian Hou, Jialiang Zhu, Hao Wu, Qirui Ren, Guozhong Xing, Pui-In Mak, Feng Zhang

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2023

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance.

Xunming Zhang, Long Liu, Di Wang, Ruijun Lin, Heyong Yang, Xiaoxin Xu, Jianguo Yang, Guozhong Xing, Xiaoyong Xue, Xiaoyang Zeng

IEEE Trans. Circuits Syst. II Express Briefs, June, 2023

Gate-Tunable Anisotropic Oxygen Ion Migration in SrCoO_<i>x</i>: Toward Emerging Oxide-Based Artificial Synapses.

Tingting Miao, Bin Cui, Cungang Huang, Di Wang, Long Liu, Weikang Liu, Yongzhe Li, Ruiyue Chu, Xue Ren, Liang Liu, Bin Cheng, Guangjun Zhou, Hongwei Qin, Guozhong Xing, Jifan Hu

Adv. Intell. Syst., March, 2023

2022

Implementation of Highly Reliable and Energy-Efficient Nonvolatile In-Memory Computing using Multistate Domain Wall Spin-Orbit Torque Device.

Huai Lin, Nuo Xu, Di Wang, Long Liu, Xuefeng Zhao, Yongjian Zhou, Xuming Luo, Cheng Song, Guoqiang Yu, Guozhong Xing

Adv. Intell. Syst., 2022

2021

Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory.

Xu Zheng, Jie Yu, Wenxuan Sun, Jinru Lai, Danian Dong, Guozhong Xing, Xiaoxin Xu

Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021