Steven Bartling

According to our database1, Steven Bartling authored at least 10 papers between 2011 and 2019.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2019
16MHz FRAM Micro-Controller with a Low-Cost Sub-1μA Embedded Piezo-Electric Strain Sensor for ULP Motion Detection.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018
Energy Efficient Adiabatic FRAM with 0.99 PJ/Bit Write for IoT Applications.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

2017
Non-volatile logic SoC with software-hardware co-design and integrated supply supervisor for energy harvesting applications.
Proceedings of the IEEE 60th International Midwest Symposium on Circuits and Systems, 2017

FAR: A 4.12μW ferro-electric auto-recovery for battery-less BSN SoCs.
Proceedings of the IEEE Biomedical Circuits and Systems Conference, 2017

2015
A digitally-controlled power-aware low-dropout regulator to reduce standby current drain in ultra-low-power MCU.
Proceedings of the Sixteenth International Symposium on Quality Electronic Design, 2015

2014
An FRAM-Based Nonvolatile Logic MCU SoC Exhibiting 100% Digital State Retention at <i>VDD</i> = 0 V Achieving Zero Leakage With < 400-ns Wakeup Time for ULP Applications.
IEEE J. Solid State Circuits, 2014

A 1.2µW SIMO energy harvesting and power management unit with constant peak inductor current control achieving 83-92% efficiency across wide input and output voltages.
Proceedings of the Symposium on VLSI Circuits, 2014

2013
An 8MHz 75µA/MHz zero-leakage non-volatile logic-based Cortex-M0 MCU SoC exhibiting 100% digital state retention at VDD=0V with <400ns wakeup and sleep transitions.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

2012
A Low-Voltage 1 Mb FRAM in 0.13 µm CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin.
IEEE J. Solid State Circuits, 2012

2011
A low-voltage 1Mb FeRAM in 0.13μm CMOS featuring time-to-digital sensing for expanded operating margin in scaled CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011


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