Zhehong Wang

Orcid: 0000-0001-5112-639X

According to our database1, Zhehong Wang authored at least 14 papers between 2018 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2022
Hardware Acceleration for Third-Generation FHE and PSI Based on It.
CoRR, 2022

Audio and Image Cross-Modal Intelligence via a 10TOPS/W 22nm SoC with Back-Propagation and Dynamic Power Gating.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

A 22nm 3.5TOPS/W Flexible Micro-Robotic Vision SoC with 2MB eMRAM for Fully-on-Chip Intelligence.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021
A 2.46M Reads/s Seed-Extension Accelerator for Next-Generation Sequencing Using a String-Independent PE Array.
IEEE J. Solid State Circuits, 2021

RRAM-DNN: An RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator.
IEEE J. Solid State Circuits, 2021

2020
An All-Weights-on-Chip DNN Accelerator in 22nm ULL Featuring 24×1 Mb eRRAM.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

17.3 GCUPS Pruning-Based Pair-Hidden-Markov-Model Accelerator for Next-Generation DNA Sequencing.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

AA-ResNet: Energy Efficient All-Analog ResNet Accelerator.
Proceedings of the 63rd IEEE International Midwest Symposium on Circuits and Systems, 2020

A 2.46M reads/s Genome Sequencing Accelerator using a 625 Processing-Element Array.
Proceedings of the 2020 IEEE Custom Integrated Circuits Conference, 2020

2019
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination.
IEEE J. Solid State Circuits, 2019

Toward an Open-Source Digital Flow: First Learnings from the OpenROAD Project.
Proceedings of the 56th Annual Design Automation Conference 2019, 2019

2018
A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

Energy Efficient Adiabatic FRAM with 0.99 PJ/Bit Write for IoT Applications.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018


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