Tamio Ikehashi

According to our database, Tamio Ikehashi authored at least 5 papers between 1999 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

A Capacitance Varying Charge Pump with Exponential Stage-Number Dependence and Its Implementation by MEMS Technology.

Menghan Song, Tamio Ikehashi

IEICE Trans. Electron., January, 2024

2017

The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors.

Yoshihiko Kurui, Hideyuki Tomizawa, Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Tamio Ikehashi, Yoshiaki Sugizaki, Hideki Shibata

Proceedings of the 2017 IEEE SENSORS, Glasgow, United Kingdom, October 29, 2017

2008

An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation.

Tamio Ikehashi, Takayuki Miyazaki, Hiroaki Yamazaki, Atsushi Suzuki, Etsuji Ogawa, Shinji Miyano, Tomohiro Saito, Tatsuya Ohguro, Takeshi Miyagi, Yoshiaki Sugizaki, Nobuaki Otsuka, Hideki Shibata, Yoshiaki Toyoshima

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2002

A 125-mm² 1-Gb NAND flash memory with 10-MByte/s program speed.

Kenichi Imamiya, Hiroshi Nakamura, Toshihiko Himeno, Toshio Yamamura, Tamio Ikehashi, Ken Takeuchi, Kazushige Kanda, Koji Hosono, Takuya Futatsuyama, Koichi Kawai, Riichiro Shirota, Norihisa Arai, Fumitaka Arai, Kazuo Hatakeyama, Hiroaki Hazama, Masanobu Saito, Hisataka Meguro, Kevin Conley, Khandker Quader, Jian J. Che

IEEE J. Solid State Circuits, 2002

1999

A 130-mm/², 256-Mbit NAND flash with shallow trench isolation technology.

Kenichi Imamiya, Yoshihisa Sugiura, Hiroshi Nakamura, Toshihiko Himeno, Ken Takeuchi, Tamio Ikehashi, Kazushige Kanda, Koji Hosono, Riichiro Shirota, Seiichi Aritome, Kazuhiro Shimizu, Kazuo Hatakeyama, Koji Sakui

IEEE J. Solid State Circuits, 1999