Yanghyo Kim

According to our database1, Yanghyo Kim authored at least 15 papers between 2011 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
X-Band CMOS Rectifier With 4% Efficiency at -35 dBm for Wireless Power Transmission.
IEEE Access, 2023

2019
Integrated Wide-Band CMOS Spectrometer Systems for Spaceborne Telescopic Sensing.
IEEE Trans. Circuits Syst. I Regul. Pap., 2019

A Millimeter-Wave CMOS Transceiver With Digitally Pre-Distorted PAM-4 Modulation for Contactless Communications.
IEEE J. Solid State Circuits, 2019

2018
A 20Gb/s 79.5mW 127GHz CMOS transceiver with digitally pre-distorted PAM-4 modulation for contactless communications.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

A 2.6GS/s Spectrometer System in 65nm CMOS for Spaceborne Telescopic Sensing.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

2017
A 16-Gb/s 14.7-mW Tri-Band Cognitive Serial Link Transmitter With Forwarded Clock to Enable PAM-16/256-QAM and Channel Response Detection.
IEEE J. Solid State Circuits, 2017

2016
A 0.56 THz Phase-Locked Frequency Synthesizer in 65 nm CMOS Technology.
IEEE J. Solid State Circuits, 2016

A 16Gb/s 14.7mW tri-band cognitive serial link transmitter with forwarded clock to enable PAM-16 / 256-QAM and channel response detection in 28 nm CMOS.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2.1 An integrated 0.56THz frequency synthesizer with 21GHz locking range and -74dBc/Hz phase noise at 1MHz offset in 65nm CMOS.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015
Wireless Gigabit Data Telemetry for Large-Scale Neural Recording.
IEEE J. Biomed. Health Informatics, 2015

A 5.4-mW 4-Gb/s 5-band QPSK transceiver for frequency-division multiplexing memory interface.
Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015

2012
An Energy-Efficient and High-Speed Mobile Memory I/O Interface Using Simultaneous Bi-Directional Dual (Base+RF)-Band Signaling.
IEEE J. Solid State Circuits, 2012

Analysis of Noncoherent ASK Modulation-Based RF-Interconnect for Memory Interface.
IEEE J. Emerg. Sel. Topics Circuits Syst., 2012

An 8Gb/s/pin 4pJ/b/pin Single-T-Line dual (base+RF) band simultaneous bidirectional mobile memory I/O interface with inter-channel interference suppression.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2011
An 8.4Gb/s 2.5pJ/b mobile memory I/O interface using simultaneous bidirectional Dual (Base+RF) band signaling.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011


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