Franz Schanovsky

According to our database, Franz Schanovsky authored at least 6 papers between 2017 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories With Polycrystalline Films Using An Experimentally Validated TCAD Model.

M. Thesberg, Franz Schanovsky, Zlatan Stanojevic, Oskar Baumgartner, Markus Karner

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2021

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies.

Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic

Proceedings of the IEEE International Reliability Physics Symposium, 2021

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics.

Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner

Proceedings of the IEEE International Memory Workshop, 2021

2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Cell Designer - a Comprehensive TCAD-Based Framework for DTCO of Standard Logic Cells.

Zlatan Stanojevic, Georg Strof, Franz Schanovsky, Klaus Steiner, Oskar Baumgartner, Christian Kernstock, Markus Karner

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

Physical modeling of the hysteresis in M0S2 transistors.

Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser

Proceedings of the 47th European Solid-State Device Research Conference, 2017