Gerhard Rzepa

According to our database, Gerhard Rzepa authored at least 16 papers between 2014 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology.

Gautam Gaddemane, Krishna K. Bhuwalka, Philippe Matagne, Gerhard Rzepa, Maarten L. Van De Put, Sybren Santermans, Oskar Baumgartner, Hao Wu, Geert Hellings

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies.

Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic

Proceedings of the IEEE International Reliability Physics Symposium, 2021

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics.

Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner

Proceedings of the IEEE International Memory Workshop, 2021

1.5-nm Node Surrounding Gate Transistor (SGT)-SRAM Cell with Staggered Pillar and Self-Aligned Process for Gate, Bottom Contact, and Pillar.

Yisuo Li, Ken'ichi Kanazawa, Tetsuo Izawa, Koji Sakui, Georg Strof, Oskar Baumgartner, Gerhard Rzepa, Markus Karner, Zlatan Stanojevic, Nozomu Harada, Fujio Masuoka

Proceedings of the IEEE International Memory Workshop, 2021

2020

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.

Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.

Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.

Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.

Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Comphy - A compact-physics framework for unified modeling of BTI.

Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser

Microelectron. Reliab., 2018

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.

Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser

Microelectron. Reliab., 2018

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.

Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser

Microelectron. Reliab., 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Physical modeling of the hysteresis in M0S2 transistors.

Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Characterization and modeling of reliability issues in nanoscale devices.

Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

The defect-centric perspective of device and circuit reliability - From individual defects to circuits.

Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Characterization and modeling of charge trapping: From single defects to devices.

Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014